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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

• Papers
• Abstracts

• p1429 High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient   [ 91 K ]
  Authors: Y. Kanzaki, H. Kinbara, Hajime Kosugi, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
• p1433 Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs   [ 128 K ]
  Authors: Nicolas G. Wright, N. Poolamai, Konstantin V. Vassilevski, A.B. Horsfall, C. Mark Johnson
• p1437 Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K   [ 47 K ]
  Authors: Hyung Seok Lee, Sang-Mo Koo, C.M. Zetterling, Erik Danielsson, Martin Domeij, Mikael Östling
• p1441 Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs   [ 527 K ]
  Authors: S.J. Rashid, Andrej Mihaila, F. Udrea, Rajesh Kumar Malhan, G. Amaratunga
• p1445 SiC JMOSFETs for High-Temperature Stable Circuit Operation   [ 107 K ]
  Authors: Sang-Mo Koo, C.M. Zetterling, Hyung Seok Lee, Mikael Östling
• p1451 Advanced Processing Techniques for Silicon Carbide MEMS and NEMS   [ 1 M ]
  Authors: Christian A. Zorman, M. Mehregany
• p1457 Microscopic Structure and Electrical Activity of 4H-SiC/SiO₂ Interface Defects : an EPR Study of Oxidized Porous SiC   [ 396 K ]
  Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Y. Shishkin, Robert P. Devaty, W.J. Choyke
• p1463 Porous Silicon Carbide as a Membrane for Implantable Biosensors   [ 564 K ]
  Authors: A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Yue Ke, Robert P. Devaty, W.J. Choyke
• p1467 Triangular Pore Formation in Highly Doped n-Type 4H SiC   [ 627 K ]
  Authors: Y. Shishkin, W.J. Choyke, Robert P. Devaty
• p1471 Porous Structure of Anodized p-Type 6H SiC   [ 1 M ]
  Authors: Y. Shishkin, Yue Ke, Robert P. Devaty, W.J. Choyke