Silicon Carbide and Related Materials 2003
Materials Science Forum Volumes 457 - 460
doi:10.4028/0-87849-943-1
BL
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p1557
Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
[
64 K
]
Authors: N. Gogneau, F. Fossard, E. Monroy, S. Monnoye, Hugues Mank, B. Daudin
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p1561
Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
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153 K
]
Authors: S. Founta, N. Gogneau, Eugénie Martinez, Gabriel Ferro, Yves Monteil, B. Daudin, H. Mariette
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p1565
In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
[
417 K
]
Authors: Takaya Suzuki, T. Inushima
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p1569
Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
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242 K
]
Authors: Norio Onojima, J. Kaido, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
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p1573
Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
[
1 M
]
Authors: E. Monroy, E. Sarigiannidou, F. Fossard, E. Enjalbert, N. Gogneau, E. Bellet-Amalric, J. Brault, J.-L. Rouvière, Le Si Dang, S. Monnoye, Hugues Mank, B. Daudin
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p1577
Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
[
262 K
]
Authors: F. Fossard, J. Brault, N. Gogneau, E. Monroy, F. Enjalbert, Le Si Dang, E. Bellet-Amalric, S. Monnoye, B. Daudin, Hugues Mank
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p1581
GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
[
1 M
]
Authors: J. Napierala, D.M. Martin, H.-J. Bühlmann, S. Gradecak, M. Ilegems
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p1585
Growth and Field Emission of GaN Nanowires
[
577 K
]
Authors: T.Y. Kim, Seung Hyun Lee, Y.H. Mo, Kee Suk Nahm
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p1589
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
[
107 K
]
Authors: A. Helman, M. Tchernycheva, K. Moumanis, A. Lusson, E. Warde, F.H. Julien, E. Monroy, F. Fossard, B. Daudin, Le Si Dang
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p1593
Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
[
64 K
]
Authors: F. Fossard, N. Gogneau, E. Monroy, Le Si Dang, S. Monnoye, Hugues Mank, B. Daudin