HOME CONTACT

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

• Papers
• Abstracts

• p1597 Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition   [ 621 K ]
  Authors: Jae Kyeong Jeong, Ho Keun Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim
• p1601 X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC   [ 1018 K ]
  Authors: B. Poust, P. Feichtinger, R. Sandhu, I.P. Smorchkova, B. Heying, T. Block, M. Wojtowicz, M.S. Goorsky
• p1605 Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers   [ 487 K ]
  Authors: S. Hayashi, B. Poust, B. Heying, M.S. Goorsky
• p1609 Radiotracer Spectroscopy on Group II Acceptors in GaN   [ 311 K ]
  Authors: F. Albrecht, G. Pasold, Joachim Grillenberger, U. Reislöhner, Marc Dietrich, W. Witthuhn, Isolde Collaboration
• p1613 Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults   [ 501 K ]
  Authors: B.J. Skromme, L. Chen, M.K. Mikhov, Hisanori Yamane, M. Aoki, F.J. DiSalvo
• p1617 An Ab Initio Study of Intrinsic Stacking Faults in GaN   [ 131 K ]
  Authors: Hisaomi Iwata, Sven Öberg, Patrick R. Briddon
• p1621 AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut^TM Technology   [ 410 K ]
  Authors: H. Larhèche, B. Faure, Claire Richtarch, Fabrice Letertre, R. Langer, P. Bove
• p1625 Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements   [ 152 K ]
  Authors: R. Aubry, J.-C. Jacquet, Christian Dua, H. Gérard, B. Dessertenne, M.A. di Forte-Poisson, Yvon Cordier, S.L. Delage
• p1629 High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire   [ 1 M ]
  Authors: V. Desmaris, Joakim Eriksson, Niklas Rorsman, Herbert Zirath
• p1633 Self-Aligned N+ Polysilicon-Gate GaN MOSFETs   [ 177 K ]
  Authors: Kevin Matocha, T.P. Chow, Ronald J. Gutmann