Paper Titles
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
p.501
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
p.505
Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
p.509
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
p.513
Annealing Study on Radiation-Induced Defects in 6H-SiC
p.517
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
p.521
Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes
p.525
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
p.529
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
p.533

Annealing Study on Radiation-Induced Defects in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

517-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.517

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Online since:

June 2004

Authors:

M.V.B. Pinheiro, Th. Lingner, F. Caudepon, Siegmund Greulich-Weber, Johann Martin Spaeth

Keywords:

6H-SiC, Annealing, Electron Irradiation, EPR, MCDA, PL

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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