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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

• Papers
• Abstracts

• p309 Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows   [ 184 K ]
  Authors: M.J. Hernández, M. Cervera, J. Piqueras, T. del Caño, J. Jiménez
• p313 Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers   [ 1 M ]
  Authors: Gabriel Ferro, D. Panknin, J. Stoemenos, Carole Balloud, Jean Camassel, E.K. Polychroniadis, Yves Monteil, Wolfgang Skorupa
• p317 Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films   [ 184 K ]
  Authors: S. Miyajima, A. Yamada, Makoto Konagai
• p321 Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate   [ 343 K ]
  Authors: Soo Hyung Seo, T.H. Lee, J.S. Park, Joon Suk Song, Myung Hwan Oh
• p325 Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH₃SiH₃   [ 2 M ]
  Authors: Yoshifumi Ikoma, R. Ohtani, Teruaki Motooka
• p329 Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction   [ 912 K ]
  Authors: Md. Shajahan, Y.H. Mo, Kee Suk Nahm
• p333 Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures   [ 79 K ]
  Authors: M. Smith, R.A. McMahon, M. Voelskow, Wolfgang Skorupa, J. Stoemenos
• p339 Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction   [ 1019 K ]
  Authors: Matthias Weisser, Christoph Seitz, Peter J. Wellmann, Rainer Hock, Andreas Magerl
• p343 TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C   [ 4 M ]
  Authors: J.L. Demenet, X. Milhet, J. Rabier, P. Cordier
• p347 TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent   [ 897 K ]
  Authors: Kazuhito Kamei, Kazuhiko Kusunoki, S. Munetoh, Toru Ujihara, Kazuo Nakajima