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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

• Papers
• Abstracts

• p391 Reconstruction of Cleaved 6H-SiC Surfaces   [ 303 K ]
  Authors: Ulrich Starke, M. Tallarida, A. Kumar, K.M. Horn, O. Seifarth, L. Kipp
• p395 The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC   [ 415 K ]
  Authors: Thomas Seyller, N. Sieber, Konstantin V. Emtsev, R. Graupner, Lothar Ley, A. Tadich, D. James, J.D. Riley, R.C.G. Leckey, M. Polcik
• p399 H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization   [ 427 K ]
  Authors: M. D'Angelo, H. Enriquez, M. Silly, V. Derycke, V.Yu. Aristov, P. Soukiassian, C. Ottaviani, M. Pedio, P. Perfetti
• p403 Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum   [ 241 K ]
  Authors: Asaoka Yasushi, N. Sano, Tadaaki Kaneko
• p407 SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets   [ 3 M ]
  Authors: S. Tanaka, H. Nakagawa, I. Suemune
• p411 Dynamic of Laser Ablation in SiC   [ 357 K ]
  Authors: Arthur Medvid, Petr M. Lytvyn
• p415 Tailoring the SiC Subsurface Stacking by the Chemical Potential   [ 16 M ]
  Authors: Ulrich Starke, J. Bernhardt, J. Schardt, A. Seubert, K. Heinz
• p419 Growth of Ultrathin Ag Films on 4H-SiC(0001)   [ 74 M ]
  Authors: S. Soubatch, Ulrich Starke
• p423 Wettability Study of SiC in Correlation with XPS Analysis   [ 71 K ]
  Authors: V. Stambouli, Didier Chaussende, Mikhail Anikin, G. Berthomé, V. Thoreau, J.C. Joud
• p427 Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy   [ 1 M ]
  Authors: Masaaki Hirai, Chihiro Kamezawa, S. Azatyan, Z. An, T. Shinagawa, T. Fujisawa, Masahiko Kusaka, Motohiro Iwami