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A Comparison of Quantum Correction Models for Nanoscale MOS Structures under Inversion Conditions

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Abstract:

Quantum correction model features the correction of the inversion layer charge on different classical transport models in semiconductor device simulation. This approach has successfully been of great interest in the recent years. Considering a metal-oxide-semiconductor (MOS) structure in this paper, the Hänsch, the modified local density approximation (MLDA), the density-gradient (DG), the effective potential (EP), and our models are investigated computationally and compared systematically with the result of the Schrödinger-Poisson (SP) model. In terms of the accuracy for (1) the position of the charge concentration peak, (2) the maximum of the charge concentration, (3)the total inversion charge sheet density, and (4) the average inversion charge depth, these well-established models are examined simultaneously. The DG model requires the solution of a boundary value problem, the EP model overestimates the position of the charge concentration peak and the maximum of the charge concentration, our explicit model demonstrates good accuracy among models.

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Periodical:

Materials Science Forum (Volumes 480-481)

Pages:

603-610

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.480-481.603

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Cite this paper

Online since:

March 2005

Authors:

Yiming Li

Keywords:

Computer Simulation, Electron Density, MOS Structure, Nanodevice, Numerical Method, Quantum Correction Model, Quantum Mechanical effects

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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