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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p47 SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design   [ 419 K ]
  Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
• p53 Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor   [ 105 K ]
  Authors: Shin Ichi Nishizawa, Michel Pons
• p57 Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor   [ 183 K ]
  Authors: Alessandro Veneroni, Fabrizio Omarini, Maurizio Masi, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza
• p61 SiC and III-Nitride Growth in Hot-Wall CVD Reactor   [ 3 M ]
  Authors: Erik Janzén, J.P. Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul Hassan, Anne Henry, I.G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab
• p67 New Achievements on CVD Based Methods for SiC Epitaxial Growth   [ 604 K ]
  Authors: Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G. Abbagnale, Alessandro Veneroni, Fabrizio Omarini, L. Zamolo, Maurizio Masi, Fabrizio Roccaforte, G. Giannazzo, Salvatore Di Franco, Francesco La Via
• p73 Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive   [ 1 M ]
  Authors: Rachael L. Myers-Ward, Olle Kordina, Z. Shishkin, Shailaja P. Rao, R. Everly, S.E. Saddow
• p77 High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor   [ 235 K ]
  Authors: Jie Zhang, Janice Mazzola, Carl Hoff, Yaroslav Koshka, Jeff B. Casady
• p81 Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor   [ 264 K ]
  Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuck, Michael S. Mazzola, Jeffery L. Wyatt
• p85 Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD   [ 260 K ]
  Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
• p89 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles   [ 2 M ]
  Authors: Hiroaki Saitoh, Tsunenobu Kimoto