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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p515 Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC   [ 112 K ]
  Authors: N.T. Son, Anne Henry, J. Isoya, Erik Janzén
• p519 Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects   [ 1 M ]
  Authors: A. Gali, T. Hornos, Peter Deák, N.T. Son, Erik Janzén, W.J. Choyke
• p523 Ab-Initio Study of Dopant Interstitials in 4H-SiC   [ 307 K ]
  Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov
• p527 Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC   [ 61 K ]
  Authors: M. Bockstedte, Alexander Mattausch, Oleg Pankratov
• p531 3d-Transition Metals in Cubic and Hexagonal Silicon Carbide   [ 76 K ]
  Authors: W.V.M. Machado, João F. Justo, Lucy V.C. Assali
• p535 Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation   [ 246 K ]
  Authors: Thomas Seyller
• p541 First Principles Simulations of SiC-Based Interfaces   [ 434 K ]
  Authors: A. Catellani, G. Cicero, M.C. Righi, C.A. Pignedoli
• p547 Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)   [ 449 K ]
  Authors: Konstantin V. Emtsev, Thomas Seyller, Lothar Ley, A. Tadich, L. Broekman, E. Huwald, J.D. Riley, R.C.G. Leckey
• p551 Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion   [ 206 K ]
  Authors: Bharat Krishnan, Yaroslav Koshka
• p555 Analysis of SiC Islands Formation during First Steps of Si Carbonization Process   [ 564 K ]
  Authors: David Méndez, A. Aouni, Daniel Araújo, Etienne Bustarret, Gabriel Ferro, Yves Monteil