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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p559 ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere   [ 103 K ]
  Authors: Kun Yuan Gao, Thomas Seyller, Konstantin V. Emtsev, Lothar Ley, Florin Ciobanu, Gerhard Pensl
• p563 SiC/SiO₂ Interface States: Properties and Models   [ 214 K ]
  Authors: Valery V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans
• p569 The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO₂ Defects   [ 128 K ]
  Authors: J.M. Knaup, Peter Deák, A. Gali, Z. Hajnal, Thomas Frauenheim, W.J. Choyke
• p573 Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination   [ 302 K ]
  Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto, Atsumi Miyashita, Masahito Yoshikawa
• p577 Structural and Electronic Properties of Si_1-xC_xO₂   [ 111 K ]
  Authors: João F. Justo, Cesar R.S. da Silva, I. Pereyra, Lucy V.C. Assali
• p581 Surface and Interface Studies of Si-Rich 4H-SiC and SiO₂   [ 256 K ]
  Authors: Charíya Virojanadara, Leif I. Johansson
• p585 Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation   [ 161 K ]
  Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, Takeshi Hattori
• p589 Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis   [ 132 K ]
  Authors: Kevin Matocha, Jesse B. Tucker, Ed Kaminsky
• p593 Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors   [ 210 K ]
  Authors: David J. Meyer, Morgen S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis
• p599 Technological Aspects of Ion Implantation in SiC Device Processes   [ 314 K ]
  Authors: Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami