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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p645 Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation   [ 147 K ]
  Authors: Servane Blanqué, J. Lyonnet, Jean Camassel, R. Pérez, P. Terziyska, Sylvie Contreras, Phillippe Godignon, Narcis Mestres, Jordi Pascual
• p649 n⁺/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature   [ 102 K ]
  Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi
• p653 Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS   [ 56 K ]
  Authors: P. Zhao, E. Rusli, Jun Hai Xia, Chung Ming Tan, Y. Liu, Chin Che Tin, S.F. Yoon, Weiguang Zhu, J. Ahn
• p657 The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC   [ 133 K ]
  Authors: C. Radtke, I.J.R. Baumvol, B.C. Ferrera, F.C. Stedile
• p661 Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer   [ 118 K ]
  Authors: Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda
• p665 Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC   [ 292 K ]
  Authors: Antonella Poggi, A. Parisini, Sandro Solmi, Roberta Nipoti
• p669 High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient   [ 76 K ]
  Authors: Ryouji Kosugi, Kenji Fukuda, Kazuo Arai
• p673 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O   [ 164 K ]
  Authors: A. Pérez-Tomás, Dominique Tournier, Phillippe Godignon, Narcis Mestres, José Millán
• p677 High-Reliability ONO Gate Dielectric for Power MOSFETs   [ 90 K ]
  Authors: Satoshi Tanimoto, Hideaki Tanaka, Tetsuya Hayashi, Yoshio Shimoida, Masakatsu Hoshi, Teruyoshi Mihara
• p681 An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study   [ 197 K ]
  Authors: Kumaresan Ramanujam, Hidetsugu Furuichi, Koshi Taguchi, Satoshi Yukumoto, Shigehiro Nishino