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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p93 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method   [ 3 M ]
  Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga
• p97 Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates   [ 1 M ]
  Authors: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara
• p101 Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor   [ 468 K ]
  Authors: Anne Henry, Erik Janzén
• p105 Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth   [ 201 K ]
  Authors: Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt
• p109 Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC   [ 813 K ]
  Authors: Günter Wagner, D. Schulz, J. Doerschel
• p113 CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates   [ 1 M ]
  Authors: Ze Hong Zhang, Ying Gao, Arul Arjunan, Eugene Toupitsyn, Priyamvada Sadagopan, Robert M. Kennedy, T.S. Sudarshan
• p117 Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates   [ 189 K ]
  Authors: Caroline Blanc, Marcin Zielinski, Veronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil
• p121 Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane   [ 201 K ]
  Authors: C. Sartel, Veronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth
• p125 Is the Al Solubility Limit in SiC Temperature Dependent or not?   [ 989 K ]
  Authors: Christophe Jacquier, Gabriel Ferro, Marcin Zielinski, E.K. Polychroniadis, A. Andreadou, Jean Camassel, Yves Monteil
• p129 Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique   [ 1 M ]
  Authors: S. Yoneda, Tomoaki Furusho, H. Takagi, S. Ohta, Shigehiro Nishino