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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p1057 Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN   [ 873 K ]
  Authors: G. Savini, M.I. Heggie, C.P. Ewels, N. Martsinovich, R. Jones, A.T. Blumenau
• p1061 High Temperature Contacts to GaN and SiC Based on TiB_x Nanostructure Layers   [ 618 K ]
  Authors: Mykola S. Boltovets, V.N. Ivanov, A.Yu. Avksentyev, A.E. Belyaev, A.G. Borisenko, O.A. Fedorovitsh, Raisa V. Konakova, Ya.Ya. Kudryk, Petr M. Lytvyn, Victor V. Milenin, A.V. Sachenko, Yu.N. Sveschnikov
• p1065 Microscopic Spatial Distribution of Bound Excitons in High-Quality ZnO   [ 441 K ]
  Authors: F. Bertram, Daniel Forster, J. Christen, N. Oleynik, Armin Dadgar, A. Krost