Paper Titles
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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
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Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
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Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
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Recombination Enhanced Defect Annealing in 4H-SiC
p.369
Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
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Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
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Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
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Recombination Enhanced Defect Annealing in 4H-SiC

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Abstract:

Recombination enhanced defect annealing of intrinsic defects in 4H-SiC, created by low energy electron irradiation, has been observed. A reduction the defect concentration at temperature lower than the normal annealing temperature of 400º C and 800°C is observed after either above bandgap laser excitation or forward biasing of a pin-diode. The presence of the defects has been studied both electrically and optically using capacitance transient spectroscopy and low temperature photoluminescence. Photoluminescence measurements show that several lines, normally detected after electron irradiation, have almost or entirely disappeared by recombination enhanced annealing at room temperature. From capacitance transient measurements, the annealing enhancement is found to be largest for the HS2 hole trap, while the EH1 and EH3 electron traps also anneal out by recombination enhanced reaction but at a lower rate.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

369-372

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.369

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Online since:

May 2005

Authors:

L. Storasta, F.H.C. Carlsson, Peder Bergman, Erik Janzén

Keywords:

Enhanced Annealing, Radiation Damage, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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