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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p177 Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method   [ 770 K ]
  Authors: S. Sugishita, A. Shoji, Yoshihiko Mukai, Taro Nishiguchi, K. Michikami, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
• p181 Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate   [ 2 M ]
  Authors: M. Nakamura, Toshiyuki Isshiki, Taro Nishiguchi, Kouji Nishio, Satoru Ohshima, Shigehiro Nishino
• p185 Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method   [ 1 M ]
  Authors: Toshiyuki Isshiki, M. Nakamura, Taro Nishiguchi, Kouji Nishio, Satoru Ohshima, Shigehiro Nishino
• p189 Planar Defects, Voids and their Relationship in 3C-SiC Layers   [ 561 K ]
  Authors: David Méndez, A. Aouni, Daniel Araújo, Gabriel Ferro, Yves Monteil, Etienne Bustarret
• p193 Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate   [ 1 M ]
  Authors: Taro Nishiguchi, M. Nakamura, Kouji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
• p197 Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers   [ 1 M ]
  Authors: Hugues Mank, Catherine Moisson, Daniel Turover, M.E. Twigg, S.E. Saddow
• p201 Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates   [ 547 K ]
  Authors: Christian Förster, Volker Cimalla, Oliver Ambacher, Jörg Pezoldt
• p205 Challenge to 200 mm 3C-SiC Wafers Using SOI   [ 770 K ]
  Authors: Motoi Nakao, Hirofumi Iikawa, Katsutoshi Izumi, Takashi Yokoyama, Sumio Kobayashi
• p209 Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates   [ 385 K ]
  Authors: Hideki Shimizu, Kensaku Hisada, Yosuke Aoyama
• p213 Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification   [ 878 K ]
  Authors: Jörg Pezoldt, E.K. Polychroniadis, Thomas Stauden, Gernot Ecke, T. Chassagne, P. Vennéguès, André Leycuras, D. Panknin, J. Stoemenos, Wolfgang Skorupa