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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p261 Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization   [ 80 K ]
  Authors: V.B. Shuman, N.S. Savkina
• p265 X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates   [ 1 M ]
  Authors: I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Mikael Syväjärvi, Rositza Yakimova
• p269 On Current Limitations in Porous SiC Applications   [ 1002 K ]
  Authors: M. Mynbaeva, A. Lavrent'ev, I. Kotousova, A.N. Volkova, K. Mynbaev, A.A. Lebedev
• p273 Interface Defects in n-Type 3C-SiC/SiO₂: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals   [ 202 K ]
  Authors: Hans Jürgen von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, R. P. Devaty, W.J. Choyke
• p277 Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC   [ 177 K ]
  Authors: Hans Jürgen von Bardeleben, J.L. Cantin, I. Vickridge, Yong Wei Song, S. Dhar, Leonard C. Feldman, John R. Williams, L. Ke, Y. Shishkin, R. P. Devaty, W.J. Choyke
• p283 Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability   [ 327 K ]
  Authors: Sakwe Aloysius Sakwe, Z.G. Herro, Peter J. Wellmann
• p287 Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies   [ 222 K ]
  Authors: H. Colder, M. Morales, Richard Rizk, I. Vickridge
• p291 RBS-Channeling and EPR Studies of Damage in 2 MeV Al²⁺-Implanted 6H-SiC Substrates   [ 169 K ]
  Authors: Y. Morilla, J. García López, Gábor Battistig, J.L. Cantin, J.C. Cheang-Wong, Hans Jürgen von Bardeleben, M.A. Respaldiza
• p295 Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy   [ 542 K ]
  Authors: Gabriel Ferro, D. Panknin, E.K. Polychroniadis, Yves Monteil, Wolfgang Skorupa, J. Stoemenos
• p299 Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC   [ 820 K ]
  Authors: Hosni Idrissi, Maryse Lancin, Joel Douin, G. Regula, Bernard Pichaud