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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p303 Pressure Effect on the Elastic Properties of SiC Polytypes   [ 175 K ]
  Authors: S.Yu. Davydov
• p307 [01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction   [ 5 M ]
  Authors: Christoph Seitz, Z.G. Herro, Boris M. Epelbaum, Albrecht Winnacker, Rainer Hock, Andreas Magerl
• p311 XRDT Study of Structural Defects of 6H-SiC Crystals   [ 4 M ]
  Authors: G. Agrosì, R.A. Fregola, A. Monno, Eugenio Scandale, G. Tempesta
• p315 Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals   [ 2 M ]
  Authors: Tomohisa Kato, Kazutoshi Kojima, Shin Ichi Nishizawa, Kazuo Arai
• p319 PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate   [ 353 K ]
  Authors: E.K. Polychroniadis, A. Mantzari, A. Freudenberg, Jürgen Wollweber, R. Nitschke, Thomas Frank, Gerhard Pensl, Adolf Schöner
• p323 Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers   [ 568 K ]
  Authors: Syunsuke Izumi, Hidekazu Tsuchida, Takeshi Tawara, Isaho Kamata, Kunikaza Izumi
• p327 Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC   [ 295 K ]
  Authors: Augustinas Galeckas, H. K.-Nielsen, Jan Linnros, Anders Hallén, B.G. Svensson, P. Pirouz
• p331 Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix   [ 218 K ]
  Authors: Jean Camassel, Sandrine Juillaguet
• p335 Specific Aspects of Type II Heteropolytype Stacking Faults in SiC   [ 182 K ]
  Authors: Sandrine Juillaguet, Jean Camassel
• p341 Optical Characterization of Deep Level Defects in SiC   [ 590 K ]
  Authors: Bjorn Magnusson, Erik Janzén