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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p389 Study of Ion Induced Damage in 4H-SiC   [ 113 K ]
  Authors: A. Lo Giudice, P. Oliveira, F. Fizzotti, Claudio Manfredotti, E. Vittone, S. Bianco, Giuseppe Bertuccio, R. Casiraghi, M. Jaksic
• p393 Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers   [ 264 K ]
  Authors: Peter J. Wellmann, Ralf Müller, Michel Pons, Aurelie Thuaire, Alexandre Crisci, Michel Mermoux, Laurent Auvray
• p397 Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy   [ 208 K ]
  Authors: Michael S. Mazzola, Swapna G. Sunkari, Janice Mazzola, Hrishikesh Das, Galyna Melnychuck, Yaroslav Koshka, Jeffery L. Wyatt, Jie Zhang
• p401 Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC   [ 341 K ]
  Authors: Julien Pernot, Sylvie Contreras, Jean Camassel, Jean-Louis Robert
• p405 Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay   [ 201 K ]
  Authors: R.J. Kumar, P.A. Losee, Can Hua Li, Joseph Seiler, I. Bhat, T.P. Chow, J.M. Borrego, Ronald J. Gutmann
• p409 Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals   [ 131 K ]
  Authors: L. Storasta, R. Aleksiejūnas, M. Sūdžius, A. Kadys, T. Malinauskas, Kestutis Jarašiūnas, B. Magnusson, Erik Janzén
• p413 Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers   [ 160 K ]
  Authors: K. Neimontas, R. Aleksiejūnas, M. Sūdžius, Kestutis Jarašiūnas, J.P. Bergman
• p417 Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC   [ 100 K ]
  Authors: Sergey A. Reshanov, Gerhard Pensl
• p421 Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt   [ 299 K ]
  Authors: Phillippe Godignon, Christophe Jacquier, Servane Blanqué, Josep Montserrat, Gabriel Ferro, Sylvie Contreras, Marcin Zielinski, Yves Monteil
• p425 Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC   [ 86 K ]
  Authors: R.R Ciechonski, Samuele Porro, Mikael Syväjärvi, Rositza Yakimova