Materials Science Forum - J. Lennart Lindström

p1087 Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon
Authors: Bengt G. Svensson, J. Lennart Lindström

p579 Oxygen in Silicon
Authors: James W. Corbett, Peter Deák, J. Lennart Lindström, L.M. Roth, L.C. Snyder

p333 A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
Authors: J. Lennart Lindström, Bengt G. Svensson, W.M. Chen

p1445 Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
Authors: Anne Henry, Bo Monemar, J. Lennart Lindström, T.D. Bestwick, G.S. Oehrlein

p117 A New Photoluminescent Center in Mercury-Doped Silicon
Authors: Anne Henry, Bo Monemar, J. Peber Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett

p1239 Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
Authors: T. Hallberg, J. Lennart Lindström, Bengt G. Svensson, Krzysztof Swiatek

p1371 Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon
Authors: A.M. Frens, M.T. Bennebroek, A.J. Zakrzewski, J. Schmidt, W.M. Chen, Erik Janzén, J. Lennart Lindström, Bo Monemar

p1807 SF₆/0₂ and CF₄/0₂ Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
Authors: I.A. Buyanova, Anne Henry, Bo Monemar, J. Lennart Lindström, Moissei K. Sheinkman, G.S. Oehrlein

p361 The Oxygen Dimer in Silicon: Some Experimental Observations
Authors: T. Hallberg, J. Lennart Lindström, L.I. Murin, V.P. Markevich

p367 Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
Authors: J. Lennart Lindström, T. Hallberg, P. Liberski, Bengt G. Svensson, L.I. Murin, V.P. Markevich

MSF - Authors (Lindström, J.L.)