Materials Science Forum

p1489 Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
Authors: Donat J. As, S. Potthast, J. Schörmann, S.F. Li, K. Lischka, Hiroyuki Nagasawa, Masayuki Abe

p561 Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements
Authors: W. Plotz, V. Holy, W.V.D. Hoogenhof, W. Ahrer, N. Frank, C. Schiller, K. Lischka

p395 MBE Growth of High Mobility HgSe:Fe Layers
Authors: T. Widmer, D. Schikora, G. Hendorfer, S. Luther, W. Jantsch, K. Lischka, M.v. Ortenberg

p561 Strain Characterization of Hg_1-xFe_xSe-Layers by Electron Spin Resonance
Authors: G. Hendorfer, W. Jantsch, W. Helzel, J.H. Li, Zbysław Wilamowski, T. Widmer, D. Schikora, K. Lischka

p1173 An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
Authors: B. Schöttker, J. Kühler, Donat J. As, D. Schikora, K. Lischka

p1197 Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study
Authors: J.L.F. da Silva, R. Enderlein, L.M.R. Scolfaro, J.R. Leite, A. Tabata, K. Lischka, D. Schikora, Friedhelm Bechstedt

p1339 Cathodoluminescence of Cubic GaN Epilayers
Authors: Cheng Ming Wang, Donat J. As, D. Schikora, B. Schöttker, K. Lischka

p1367 Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
Authors: A. Tabata, R. Enderlein, A.P. Lima, J.R. Leite, V. Lemos, S. Kaiser, D. Schikora, B. Schöttker, U. Köhler, K. Lischka

p1591 Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping
Authors: M. Lisker, Hartmut Witte, A. Krtschil, J. Christen, Donat J. As, B. Schöttker, K. Lischka

p1595 Resonant Raman Scattering and the Emission Process in Zincblende-In_xGa_1-xN
Authors: V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, Donat J. As, D. Schikora, K. Lischka

MSF - Authors (Lischka, K.)