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MSF - Authors (Kimoto, T.)

ISSN: 1662-9752

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• p219 Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
  Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
• p223 Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
  Authors: Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto
• p251 SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology
  Authors: Yuuichi Takeuchi, Mitsuhiro Kataoka, Tsunenobu Kimoto, Hiroyuki Matsunami, Rajesh Kumar Malhan
• p339 Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
  Authors: Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Takeshi Mitani, Shinichi Nakashima
• p399 Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
  Authors: Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto
• p501 Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
  Authors: Katsunori Danno, Tsunenobu Kimoto
• p843 Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
  Authors: Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami, Gerhard Pensl
• p987 Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N₂O Annealing
  Authors: Tsunenobu Kimoto, H. Kawano, Masato Noborio, Jun Suda, Hiroyuki Matsunami
• p991 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO₂-Interfaces
  Authors: Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valeri V. Afanas'ev, Sheron Shamuilia, Adolf Schöner, Tsunenobu Kimoto
• p1305 Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
  Authors: Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto