Materials Science Forum - Hirotaka Yamaguchi

p75 SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
Authors: Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai

p103 Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Authors: Wook Bahng, Yasuo Kitou, Shinichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino

p457 In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
Authors: Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shinichi Nishizawa, Kazuo Arai

p461 X-ray Topographic Study of SiC Crystal at High Temperature
Authors: Hirotaka Yamaguchi, Naoki Oyanagi, Tomohisa Kato, Yukio Takano, Shinichi Nishizawa, Wook Bahng, Sadafumi Yoshida, Kazuo Arai

p295 Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
Authors: Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Shinichi Nishizawa, Kazuo Arai

p87 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
Authors: Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai

p447 Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Authors: Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida

p29 High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai

p309 Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
Authors: Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Toshiyuki Ohno, Ryouji Kosugi, Akimasa Kinoshita

p313 Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
Authors: Hirotaka Yamaguchi, Hirofumi Matsuhata, Ichiro Nagai

MSF - Authors (Yamaguchi, H.)