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• p391 Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
  Authors: Nicolas Camara, Konstantinos Zekentes, Edwige Bano, Aurelie Thuaire, Alexander A. Lebedev
• p1343 About the Nature of Recombination Current in 4H-SiC pn Structures
  Authors: Anatoly M. Strel'chuk, A.V. Mashichev, Alexander A. Lebedev, A.N. Volkova, Konstantinos Zekentes
• p1473 Radiation Hard Devices Based on SiC
  Authors: Evgenia V. Kalinina, Anatoly M. Strel'chuk, Alexander A. Lebedev, Nikita B. Strokan, Alexander M. Ivanov, G. Kholuyanov
• p1477 The Limit of SiC Detector Energy Resolution in Ion Spectometry
  Authors: Rositza Yakimova, Alexander A. Lebedev, Alexander M. Ivanov, Nikita B. Strokan, Mikael Syväjärvi
• p1537 Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
  Authors: Alexander A. Lebedev, O. Yu. Ledyaev, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, A.E. Cherenkov, A.E. Nikolaev, A.S. Zubrilov, N.V. Seredova, A.A. Volkova
• p161 SiC Heteropolytype Structures Grown by Sublimation Epitaxy
  Authors: Alexander A. Lebedev
• p175 Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
  Authors: Alexander A. Lebedev, V.V. Zelenin, Pavel L. Abramov, Elena V. Bogdanova, Sergey P. Lebedev, D.K. Nel'son, Boris S. Razbirin, M.P. Scheglov, Alla S. Tregubova, Mikael Syväjärvi, Rositza Yakimova
• p427 Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
  Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, N.S. Savkina, Alexey N. Kuznetsov
• p933 Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
  Authors: Nicolas Camara, L.P. Romanov, A.V. Kirillov, Mykola S. Boltovets, Alexander A. Lebedev, V.V. Zelenin, M. Kayambaki, Konstantinos Zekentes
• p961 The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation
  Authors: Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, Vitalii V. Kozlovski