MSF - Authors (Linnarsson, M.K.)
ISSN: 1662-9752
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p637
In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
Authors: Margareta K. Linnarsson, Martin S. Janson, Urban Forsberg, Erik Janzén
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p781
Ion Implantation Processing and Related Effects in SiC
Authors: Bengt G. Svensson, Anders Hallén, J. Wong-Leung, Martin S. Janson, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, H. K.-Nielsen, C. Jagadish, Joachim Grillenberger
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p985
Electrical and Optical Properties of GaAs Doped with Li
Authors: H.P. Gislason, Baohua Yang, I.S. Hauksson, J.T. Gudmundsson, Margareta K. Linnarsson, Erik Janzén
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p413
Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
Authors: P.O.Å. Persson, Qamar-ul Wahab, L. Hultman, Nils Nordell, Adolf Schöner, K. Rottner, E. Olsson, Margareta K. Linnarsson
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p761
Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Nils Nordell, S. Karlsson, Bengt G. Svensson
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p165
High Growth Rate Epitaxy of Thick 4H-SiC Layers
Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén
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p619
Photoluminescence Study of CVD Layers Highly Doped with Nitrogen
Authors: Urban Forsberg, Anne Henry, Margareta K. Linnarsson, Erik Janzén
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p889
Channeled Implants in 6H Silicon Carbide
Authors: Martin S. Janson, Anders Hallén, Phillippe Godignon, Andrej Yu. Kuznetsov, Margareta K. Linnarsson, Erwan Morvan, Bengt G. Svensson
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p893
Damage Reduction in Channeled Ion Implanted 6H-SiC
Authors: Erwan Morvan, Narcis Mestres, F.J. Campos, Jordi Pascual, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov
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p933
Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
Authors: N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt G. Svensson, W. Witthuhn
