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ISSN: 1662-9752

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• p559 Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
  Authors: E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, Siegmund Greulich-Weber, E. Rauls, Uwe Gerstmann
• p563 Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
  Authors: E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, A.A. Sitnikov, W.C. Mitchel, S.R. Smith, Siegmund Greulich-Weber
• p651 Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
  Authors: E.N. Kalabukhova, D.V. Savchenko, Siegmund Greulich-Weber, M.F. Bulanyi, S.A. Omelchenko, O.V. Khmelenko, A.A. Gorban, E.N. Mokhov
• p355 EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
  Authors: E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, Siegmund Greulich-Weber, Uwe Gerstmann, Andreas Pöppl, J. Hoentsch, E. Rauls, Yurii Rozentzveig, E.N. Mokhov, Mikael Syväjärvi, Rositza Yakimova
• p391 Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
  Authors: Uwe Gerstmann, E. Rauls, Siegmund Greulich-Weber, E.N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri
• p399 Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
  Authors: V.S. Kiselov, E.N. Kalabukhova, S.N. Lukin, A.A. Sitnikov, V.A. Yukhymchyk, Rositza Yakimova
• p469 New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
  Authors: Uwe Gerstmann, Siegmund Greulich-Weber, E. Rauls, Johann Martin Spaeth, E.N. Kalabukhova, E.N. Mokhov, Francesco Mauri
• p791 ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States
  Authors: E.N. Kalabukhova, S.N. Lukin
• p809 Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide
  Authors: Siegmund Greulich-Weber, M. März, Johann Martin Spaeth, E.N. Mokhov, E.N. Kalabukhova
• p499 Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
  Authors: E.N. Kalabukhova, W.C. Mitchel, S.N. Lukin