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MSF - Authors (Lazar, M.)

ISSN: 1662-9752

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• p275 Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
  Authors: Gabriel Ferro, Maher Soueidan, Christophe Jacquier, Phillippe Godignon, Thomas Stauden, Jörg Pezoldt, Mihai Lazar, Josep Montserrat, Yves Monteil
• p611 Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
  Authors: Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremillieu, Jean Louis Leclercq, Jacques Dazord, Dominique Planson
• p901 1.2 kV Pin Diodes with SiCrystal Epiwafer
  Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante
• p205 Influence of Pyridinium Chlorochromate on the Properties of Electrochemically and Chemically Synthesised Polypyrrole
  Authors: M. Omastová, S. Kosina, Mihai Lazar, M. Kacurakova, J. Annus, J. Kristin
• p921 Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation
  Authors: Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Dominique Planson, B. Canut, Jean-Pierre Chante
• p571 High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
  Authors: Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Erwan Morvan, Phillippe Godignon, Wolfgang Skorupa, Jean-Pierre Chante
• p827 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
  Authors: Mihai Lazar, Christophe Raynaud, Dominique Planson, Marie Laure Locatelli, K. Isoird, Laurent Ottaviani, Jean-Pierre Chante, Roberta Nipoti, Antonella Poggi, G.C. Cardinali
• p1289 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
  Authors: K. Isoird, Mihai Lazar, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Jean-Pierre Chante
• p863 OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
  Authors: S.R. Wang, Christophe Raynaud, Dominique Planson, Mihai Lazar, Jean-Pierre Chante
• p871 Characterization of a 4H-SiC High Power Density Controlled Current Limiter
  Authors: Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, Mihai Lazar, Jean-Pierre Chante, F. Sarrus, Christian Bonhomme, J.-F. de Palma