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• p1255 Characterization of SiC MESFETs on Conducting Substrates
  Authors: Per Åke Nilsson, A.M. Saroukhan, J.O. Svedberg, Andrey O. Konstantinov, S. Karlsson, C. Adås, U. Gustafsson, Chris I. Harris, Niklas Rorsman, Joakim Eriksson, Herbert Zirath
• p427 Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
  Authors: Martin S. Janson, Anders Hallén, Margareta K. Linnarsson, Nils Nordell, S. Karlsson, Bengt G. Svensson
• p563 Growth of δ-Doped SiC Epitaxial Layers
  Authors: S. Karlsson, C. Adås, Andrey O. Konstantinov, Margareta K. Linnarsson
• p583 Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
  Authors: Margareta K. Linnarsson, P.O.Å. Persson, H. Bleichner, Martin S. Janson, Uwe Zimmermann, H. Andersson, S. Karlsson, Rositza Yakimova, L. Hultman, Bengt G. Svensson
• p187 Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
  Authors: Adolf Schöner, Andrey O. Konstantinov, S. Karlsson, R. Berge