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MSF - Authors (Langouche, G.)

ISSN: 1662-9752

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• p1177 Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
  Authors: D. Schroyen, P. Hendrickx, G. Langouche
• p1245 Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs
  Authors: G. Langouche, H. Bemelmans, J. Odeurs, G. Borghs, M. de Potter, W. Deraedt, M. Van Rossum
• p267 Co-Acceptor Complexes in Si
  Authors: A.-M. Van Bavel, G. Langouche
• p803 Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation
  Authors: G. Langouche, M.F. Wu, J. De Wachter, H. Pattyn, A.-M. Van Bavel
• p827 In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Mössbauer Spectroscopy Study
  Authors: A.-M. Van Bavel, G. Langouche
• p1105 Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
  Authors: H. Bemelmans, G. Borghs, G. Langouche
• p1147 On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
  Authors: M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, Andre Stesmans, Paul Clauws
• p1515 The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
  Authors: A.-M. Van Bavel, S. Degroote, A. Vantomme, Andre Stesmans, G. Langouche
• p339 Transition-Metal Silicide Layer Formation, the Phases of Mixed Silicides
  Authors: I. Dézsi, Cs. Fetzer, I.S. Szűcs, J. Dekoster, G. Langouche
• p437 Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized ⁵⁷Mn⁺ Ion Beam at Isolde
  Authors: G. Weyer, S. Degroote, M. Fanciulli, V.N. Fedoseyev, G. Langouche, V.I. Mishin, A.-M. Van Bavel, A. Vantomme, the ISOLDE Collaboration