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MSF - Authors (Kimerling, L.C.)

ISSN: 1662-9752

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• p163 Migration of Interstitial Boron in Silicon
  Authors: R.D. Harris, G.D. Watkins, Lionel C. Kimerling
• p387 Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
  Authors: A. Chantre, Lionel C. Kimerling
• p1111 New Impurity-Defect Reactions in Silicon
  Authors: A. Chantre, J.L. Benton, M.T. Asom, Lionel C. Kimerling
• p141 Interstitial Defect Reactions in Silicon
  Authors: Lionel C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer
• p945 Nonstoichiometry Related Acceptors in GaAs
  Authors: Lionel C. Kimerling, M.T. Asom, F.A. Thiel, J.M. Parsey
• p653 Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
  Authors: Jürgen Michel, Lionel C. Kimerling, J.L. Benton, D.J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, R.F. Ferrante
• p1433 Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
  Authors: J.L. Benton, M.A. Kennedy, Jürgen Michel, Lionel C. Kimerling
• p707 The Physics and Application of Si:Er for Light Emitting Diodes
  Authors: Jürgen Michel, F.Y.G. Ren, B. Zheng, D.C. Jacobson, J.M. Poate, Lionel C. Kimerling
• p579 Electronic Structure of Erbium Centers in Silicon
  Authors: F.X. Gan, Lucy V.C. Assali, Lionel C. Kimerling
• p585 Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits
  Authors: Jürgen Michel, J. Palm, F.X. Gan, F.Y.G. Ren, B. Zheng, S.T. Dunham, Lionel C. Kimerling