SSP - Keywords (Gallium Arsenide)
ISSN: 1012-0394-
p10
Growth of High Purity GaAs Layers by Vapour Phase Epitaxy
Authors: K. Chand, R.K. Purohit -
p23
Point Defect Assisted Diffusion in Semiconductors
Authors: Jaroslaw Dąbrowski -
p26
Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics
Authors: Nandita Dasgupta, Srinivasa Murthy G.B -
p183
Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide
Authors: R.F. Scholz, U.M. Gösele, O. Breitenstein, U. Egger, T.Y. Tan -
p313
Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
Authors: Katsuhiro Yokota, Youji Tachino, Shinya Shimizu, Kazuhiro Nakamura, Yukihira Sekine, Masanori Watanabe, Hideto Takano -
p443
Investigations of Extended Defects after Sulfur Diffusion in GaAs
Authors: N. Engler, H.S. Leipner, R.F. Scholz, P. Werner, F. Syrowatka, Jürgen Schreiber, U.M. Gösele -
p601
The Influence of Ti Surface Layer on Pt/(Ge or Sn)/Pd/Ti-GaAs Interface
Authors: J. Zlámal, Vladimír Myslík, P. Macháč