SSP - Keywords (Galium Nitride (GaN))
ISSN: 1012-0394-
p1
Charge Collection Scanning Microscopy: Non-Conventional Applications
Authors: Antonio Castaldini, Anna Cavallini -
p61
Initial Growth Mode of GaN Film on Stepped Sapphire
Authors: Min Su Yi, Tae Sik Cho, Hyun Hwi Lee -
p131
SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
Authors: G.N. Panin, O.V. Kononenko, V.N. Matveev, E.B. Yakimov, Oliver Ambacher -
p151
Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
Authors: P. Fischer, J. Christen, M. Zacharias, H. Nakashima, K. Hiramatsu -
p159
The Impurity Doping in Widegap Semiconductors
Authors: T. Ido, H. Goto -
p171
Cathodoluminescence Study on ZnO and GaN
Authors: Takashi Sekiguchi, Naoki Ohashi, Hisanori Yamane -
p221
Direct Imaging of the Crystalline and Chemical Nanostructure of GA,IN-Nitrides by Highly Spatially-, Spectrally- and Time-Resolved Cathodoluminescence
Authors: D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Böttcher, H. Selke, D. Hommel, K. Hiramatsu -
p297
Luminescence Studies on InxGa1-xN/GaN Multiple Quantum Wells by Selective Excitation Spectroscopy
Authors: C. Sasaki, M. Iwata, Y. Yamada, Tsunemasa Taguchi, S. Watanabe, M.S. Minsky, T. Takeuchi, R. Schneider, N. Yamada -
p491
Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy
Authors: Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri -
p525
Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides
Authors: N. Shmidt, V. Busov, Valentin V. Emtsev, R. Kyutt, W. Lundin, D.S. Poloskin, V.V. Ratnikov, A.V. Sakharov, A. Usikov