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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 6 - 7

• Papers
• Abstracts

• p93 Defect Formation and Lateral Oxidation during Locos Processing   [ 416 K ]
  Authors: D. Knoll, T. Grabolla, K.-E. Ehwald
• p101 Defects and Their Influence on Parasitic Devices in Integrated Circuits   [ 24 K ]
  Authors: R. Prejdova
• p103 Volume Defect Formation in CZ SI Wafers and Related Electrical Effects   [ 356 K ]
  Authors: F.G. Kirscht, P. Fricke, J. Reichel, I. Babanskaya, R. Bertoldi, G. Buchheim, C. Hansch, P. Hübler, H.-J. Machold, R. Scharfe
• p111 Buried Layer Processing for Advanced Bipolar Technology   [ 469 K ]
  Authors: Eddy Simoen, L. Deferm, Jan Vanhellemont, C. Claeys
• p119 Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography   [ 382 K ]
  Authors: Erzsébet Hild, J. Seres, E.K. Pal, S. Nouredin, T. Kormàny
• p127 Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors   [ 34 K ]
  Authors: C. Ascheron, M. Rieth, H.A. Klose
• p129 On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process   [ 223 K ]
  Authors: J. Jablonski, K. Kucharski, J. Wojciechowski
• p135 Creation of Deep Denuded Zones in CZ Silicon Wafers   [ 272 K ]
  Authors: G. Kissinger, W. Kissinger, K. Tittelbach, K. Schmalz
• p143 Defect Engineering for ULSI Epitaxial Silicon   [ 836 K ]
  Authors: George A. Rozgonyi, R.R. Kola
• p159 Computer-Simulation of Gold-Redistribution in Silicon   [ 241 K ]
  Authors: H. Gdanitz, K. Schmalz