HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 6 - 7

• Papers
• Abstracts

• p165 An Attempt to Simulate Oxygen Precipitation in Silicon   [ 167 K ]
  Authors: M. Macek
• p171 Defect Formation in Dislocation-Free Silicon Containing Oxygen   [ 73 K ]
  Authors: M.G. Mil'vidskii, Vladimir Voronkov, V.J. Reznik
• p173 Influence of Preannealing on Oxygen Precipitation   [ 176 K ]
  Authors: S. Nouredin, T. Kormàny
• p179 Silicon Intrinsic Gettering Durability and Effectiveness   [ 27 K ]
  Authors: D. Sachelarie, A. Badoiu, G. Gradinaru, M. Stoica, M. Sachelarie, V. Vivsencu
• p181 Effect of Heat Treatment on Defect Formation in Silicon   [ 299 K ]
  Authors: N.A. Sobolev, Yu.V. Vyzhigin, V.V. Eliseev, V.A. Kostylev, V.M. Likunova, E.I. Sheck
• p187 Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon   [ 572 K ]
  Authors: E. Susi
• p197 Defect Reactions in Semiconductors   [ 430 K ]
  Authors: Masashi Suezawa, Koji Sumino
• p211 Electronic States in Plastically Deformed Silicon   [ 381 K ]
  Authors: Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini
• p221 Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions   [ 602 K ]
  Authors: V.V. Bolotov, V.M. Emeksuzyan, V.A. Stuchinski
• p235 Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope   [ 483 K ]
  Authors: A.L. Aseev, Liudmila I. Fedina, D. Hoehl, H. Bartsch