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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 6 - 7

• Papers
• Abstracts

• p539 Defect Microchemistry at the Si/SiO₂ Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study   [ 236 K ]
  Authors: D. Ballutaud, M. Aucouturier
• p547 Interfacial Defects Study of the Gallium Arsenide on Silicon Heterostructure   [ 423 K ]
  Authors: A. Rocher, M.N. Charasse
• p555 Some Aspects of Interface and Surface Eingineering of AIII-BV-Compound-Semiconductors   [ 157 K ]
  Authors: G. Heymann
• p561 SOI by Silicon Dioxide Thermal Bonding   [ 443 K ]
  Authors: W. Kissinger, H. Hofmann
• p565 Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions   [ 334 K ]
  Authors: Wolfgang Skorupa
• p571 Strain and Critical Thickness of MBE Grown CaF₂-Insulators on Si(111)   [ 236 K ]
  Authors: A. Tempel, M. Mäder, A. Zehe
• p579 Defect Control in Thick SOI-Films Produced by Zone Melting Recrystallization   [ 287 K ]
  Authors: Bernd Tillack, K. Hoeppner, H.H. Richter, R. Banisch
• p585 Defects and Their Influence on Parasitic Devices in Integrated Circuits   [ 120 K ]
  Authors: R. Prejdova
• p591 Formation and Structure of Iron-Impurity Complexes in Silicon   [ 420 K ]
  Authors: C.A.J. Ammerlaan
• p603 Defect Formation in Dislocation-Free Silicon Containing Oxygen   [ 318 K ]
  Authors: M.G. Mil'vidskii, Vladimir Voronkov, V.J. Reznik