Paper Titles
Dense γ-Alon Materials Derived from SHS Synthesized Powders
p.1052
SHS Oxide Catalysts: Synthesis, Properties and Applications
p.1058
Structure and Phase Formation in SHS_FGM
p.1067
Laminated and Functionally Graded Ceramics by Electrophoretic Deposition
p.1075
(SiC/Ti3SiC2)n Multi-Layered Coatings Deposited by CVD
p.1085
Mapping of Elemental and Phase Composition in Air-Oxidized Ti3SiC2
p.1091
Thermal and Electrical Conductivity of Composites with Graded Interfaces
p.1097
Influence of the Architecture on the Mechanical Performances of Alumina-Zirconia-Mullite Ceramic Laminates
p.1103
Application of X-Ray Microtomography to the Microstructural Characterization of Al-Based Functionally Graded Materials
p.1109

(SiC/Ti3SiC2)n Multi-Layered Coatings Deposited by CVD

Article Preview

Abstract:

Thin (SiC/Ti3SiC2)n multi-layered coatings were deposited at 1100°C on ceramic substrates by chemical vapour deposition (CVD) methods. Each SiC sub-layer was classically processed from H2/CH3SiCl3. Each Ti3SiC2 sub-layer was obtained by reactive CVD (RCVD) from a H2/TiCl4 gaseous mixture reacting on each SiC solid sub-layer that was previously deposited. The growth of Ti3SiC2 by RCVD involves partial or total SiC consumption. The H2/TiCl4 ratio was chosen on the basis of a thermodynamic study. Using a sufficiently high H2/TiCl4 ratio and limiting the sub-layer thickness allowed the formation of TiC or binary titanium silicides to be avoided. By using a constant low gas pressure in the CVD reactor, it was possible to obtain nearly pure Ti3SiC2 sub-layers as thin as 0.8 μm. In that case, the ternary compound exhibits basal planes oriented perpendicular to the substrate surface. A way to obtain thinner sub-layers was the use of a pressurepulsed CVD method. In addition, the pressure-pulsed method allowed the preferential orientation to be prevented in the Ti3SiC2 coating.

You might also be interested in these eBooks
11th International Ceramics Congress View Preview

Info:

Periodical:

Advances in Science and Technology (Volume 45)

Pages:

1085-1090

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.1085

Citation:

Cite this paper

Online since:

October 2006

Authors:

Sylvain Jacques, Houssam Fakih

Keywords:

Chemical Vapor Deposition (CVD), Coating, Orientation, Ti3SiC2, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] M. W. Barsoum, T. El-Raghy: J. Am. Ceram. Soc. Vol. 79 (1996), p. (1953).

Google Scholar

[2] J. M. Molina-Aldareguia, J. Emmerlich, J. -P. Palmquist, U. Jansson and L. Hultman: Scr. Mater. Vol. 49 (2003), p.155.

Google Scholar

[3] J. Emmerlich, H. Högberg, S. Sasvári, P. O. Å. Persson, L. Hultman, J. -P. Palmquist, U. Jansson, J. M. Molina-Aldareguia and Z. Czigány: J. Appl. Phys. Vol. 96 (2004), p.4817.

DOI: 10.1063/1.1790571

Google Scholar

[4] R. Wenzel, F. Goesmann and R. Schmid-Fetzer: High-Temperature Electronic Materials, Devices and Sensors Conference, San Diego, Feb. 22-27, (1998), p.159.

DOI: 10.1109/htemds.1998.730692

Google Scholar

[5] J. -P. Palmquist, U. Jansson, T. Seppänen, P. O. Å. Persson, J. Birch, L. Hultman and P. Isberg: Appl. Phys. Lett. Vol. 81 (2002), p.835.

DOI: 10.1063/1.1494865

Google Scholar

[6] J. J. Nickl, K. K. Schweitzer and P. Luxenberg: J. Less Common Met. Vol. 26 (1972), p.335.

Google Scholar

[7] T. Goto and T. Hirai: Mater. Res. Bull. Vol. 22 (1987), p.1195.

Google Scholar

[8] E. Pickering, W. J. Lackey and S. Crain: Chem. Vap. Deposition 6 (2000), p.289.

Google Scholar

[9] C. Racault, F. Langlais, R. Naslain and Y. Kihn: J. Mater. Sci. Vol. 29 (1994) p.3941.

Google Scholar

[10] Ke Tang, Chang-an Wang, Yong Huang and Xingli Xu: J. Alloys Compd Vol. 329 (2001), p.136.

Google Scholar