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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 32 - 33

• Papers
• Abstracts

• p1 ULSI Technology - a Complex Device Manufacturing Process   [ 244 K ]
  Authors: S.J. Hillenius
• p11 Semiconductor Isotope Engineering   [ 449 K ]
  Authors: Eugene E. Haller
• p21 Crystalline Silicon for Solar Cells   [ 193 K ]
  Authors: G. Martinelli
• p27 Light-Emitting Porous Silicon: A Defective Quantum Sponge Structure?   [ 650 K ]
  Authors: U.M. Gösele, V. Lehmann
• p39 Semiconducting Silicide-Silicon Heterostructures   [ 476 K ]
  Authors: J. Chevrier, J.Y. Natoli, Isabelle Berbezier, Antoine Ronda, J. Derrien
• p51 What Local-Density Calculations Can Teach about Semiconductor Surfaces, Interfaces and Defects   [ 244 K ]
  Authors: M. Methfessel, Jaroslaw Dąbrowski
• p57 Mechanisms of Transition Metal Gettering in Silicon   [ 739 K ]
  Authors: D. Gilles
• p71 Gettering in Silicon under Vacancy Generation Conditions   [ 215 K ]
  Authors: N.T. Bagraev, L.E. Klyachkin, V.L. Sukhanov
• p77 Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers   [ 340 K ]
  Authors: Isabelle Périchaud, F. Floret, M. Stemmer, Santo Martinuzzi
• p83 Defect Engineering in Erbium-Doped Silicon Structure Technology   [ 220 K ]
  Authors: N.A. Sobolev, O.V. Alexandrov, B.N. Gresserov, G.M. Gusinskii, V.O. Naidenov, E.I. Sheck, V.I. Stepanov, Yu.V. Vyzhigin, L.F. Chepik, E.P. Troshina