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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 32 - 33

• Papers
• Abstracts

• p155 Solubility of Hydrogen in Silicon at High Temperatures   [ 261 K ]
  Authors: R.C. Newman, M.J. Binns, S.A. McQuaid, Edward C. Lightowlers
• p161 Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C   [ 234 K ]
  Authors: Charalamos A. Londos, S.A. McQuaid, M.J. Binns, R.C. Newman, J.H. Tucker
• p167 Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature   [ 301 K ]
  Authors: Andrzej Misiuk, J. Adamczewska, Jadwiga Bak-Misiuk, Josh Wolf
• p173 Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content   [ 291 K ]
  Authors: Valentin V. Emtsev, G.A. Oganesyan, K. Schmalz
• p181 New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon   [ 502 K ]
  Authors: Simona Binetti, Sandro Ferrari, Maurizio Acciarri, S. Acerboni, R. Canteri, Sergio Pizzini
• p191 Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface   [ 422 K ]
  Authors: A. Correia, J.L. Maurice, A. Boutry-Forveille, D. Ballutaud
• p197 The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si_1-xGe_x - Layers on Silicon Grown by APCVD   [ 406 K ]
  Authors: D. Krüger, Th. Morgenstern, R. Kurps, Ch. Quick
• p203 Annealing Properties of N-Doped Cz-Si Crystals   [ 138 K ]
  Authors: Chin Sheng Chen, Fu Long Dai, H.J. Ye, Y.C. Huang, De Ren Yang, H.N. Yao
• p207 Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study   [ 204 K ]
  Authors: M. Höhne, U. Juda
• p213 Formation and Properties of Tetranuclear Clusters of Manganese in Silicon   [ 256 K ]
  Authors: J. Kreissl, W. Gehlhoff