HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 32 - 33

• Papers
• Abstracts

• p303 On the Nature of Dislocation Luminescence in Si and Ge   [ 262 K ]
  Authors: E.A. Steinman
• p309 Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure   [ 498 K ]
  Authors: Zbigniew J. Radzimski, A. Buczkowski, George A. Rozgonyi
• p319 Properties of Dislocations and Point Defects in Fz-Si   [ 408 K ]
  Authors: Daniela Cavalcoli, Anna Cavallini, E. Gombia, M. Reiche
• p325 Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures   [ 417 K ]
  Authors: Sergei V. Koveshnikov, Anant Agarwal, George A. Rozgonyi
• p333 Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals   [ 242 K ]
  Authors: Yu.L. Iunin, V.I. Nikitenko, Valeri I. Orlov, B.V. Petukhov
• p339 Cu Precipitation in Strained and Relaxing Ge_xSi_1-x Heteroepitaxial Layers   [ 283 K ]
  Authors: G. Kissinger, G. Morgenstern, Hans Richter
• p345 Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures   [ 373 K ]
  Authors: V.I. Vdovin, M.G. Mil'vidskii, T.G. Yugova
• p353 The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device   [ 249 K ]
  Authors: P. Schley, G. Kissinger, R. Barth, K.-E. Ehwald
• p359 Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon   [ 96 K ]
  Authors: Robert Falster, D. Gambaro
• p361 UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology   [ 770 K ]
  Authors: M. Caymax, J. Poortmans, A. Van Ammel