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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 32 - 33

• Papers
• Abstracts

• p463 Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon   [ 378 K ]
  Authors: Michael Seibt
• p469 Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices   [ 193 K ]
  Authors: L.K. Orlov, O.A. Kuznetsov, R.A. Rubtsova, A.L. Chernov, V.I. Vdovin, N.A. Gorodilov, N.G. Kalugin, V.I. Gavrilenko
• p475 Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures   [ 224 K ]
  Authors: N.G. Kalugin, L.K. Orlov, O.A. Kuznetsov
• p481 Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)   [ 245 K ]
  Authors: L. Goldstein, P. Pagnod-Rossiaux, F. Gaborit, P. Garabedian, M. Magnabal, F. Brillouet, M. Matabon
• p489 Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures   [ 232 K ]
  Authors: H. Pettersson, Hermann G. Grimmeiss, A.L. Powell, C.C. Button, J.S. Roberts, P.I. Rockett
• p495 Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments   [ 557 K ]
  Authors: M. Gherghel
• p511 Application of Electron Microscopy to Semiconductor Materials Research   [ 943 K ]
  Authors: J. Heydenreich
• p523 X-Ray Analysis of Strained Layer Configurations   [ 452 K ]
  Authors: H.-J. Herzog
• p535 In Situ X-Ray Investigation of Relaxation Processes in Si_1-xGe_x Layers on Silicon Substrate   [ 265 K ]
  Authors: P. Zaumseil
• p541 Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures   [ 215 K ]
  Authors: R.N. Kyutt, S.S. Ruvimov, M.P. Scheglov