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Polycrystalline Semiconductors III

Solid State Phenomena Volumes 37 - 38

• Papers
• Abstracts

• p85 Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method   [ 204 K ]
  Authors: B. Lebouvier, A. Hairie, F. Hairie, Gerard Nouet, E. Paumier
• p91 Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon   [ 195 K ]
  Authors: A. Hairie, F. Hairie, Gerard Nouet, E. Paumier, A.P. Sutton
• p97 Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal   [ 248 K ]
  Authors: N. Ralantoson, A. Hairie, F. Hairie, O.B.M. Hardouin Duparc, M. Hou, Gerard Nouet, E. Paumier
• p103 Möbius Tight Binding Calculations for Grain Boundaries   [ 141 K ]
  Authors: O.B.M. Hardouin Duparc, M. Torrent
• p107 Structural and Electrical Transport Properties of Grain Boundaries in High Temperature Superconductors   [ 763 K ]
  Authors: R. Gross
• p119 The Microstructure of Sm_2-xCe_xCuO_4-δ   [ 496 K ]
  Authors: S. Christiansen, J. Markl, A. Bram, Horst P. Strunk, G. Saemann-Ischenko, H. Burzlaff
• p125 Interaction of Grain Boundaries, Dislocations and Impurity Atoms in Semiconductors   [ 244 K ]
  Authors: Kinichi Masuda-Jindo
• p133 Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties   [ 459 K ]
  Authors: A. Correia, D. Ballutaud, J.L. Maurice
• p139 Non-Ideal I-V-Characteristics of Block-Cast Silicon Solar Cells   [ 321 K ]
  Authors: O. Breitenstein, J. Heydenreich
• p145 Copper and Nickel Precipitation in a Σ=25 Silicon Bicrystal   [ 416 K ]
  Authors: Richard Rizk, X. Portier, G. Allais, Gerard Nouet