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Polycrystalline Semiconductors III

Solid State Phenomena Volumes 37 - 38

• Papers
• Abstracts

• p151 Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films   [ 310 K ]
  Authors: D. Mostefa, B. Fortin, F. Raoult, M. Sarret, G. Rossé, O. Bonnaud
• p157 Segregation and Precipitation of Platinum Silicides in Si/SiO₂ Interfaces and Dislocations   [ 386 K ]
  Authors: B. Laurent, Dominique Mangelinck, Bernard Pichaud, André Lhorte, J.B. Quoirin
• p163 Calculation of the Atomic and Electronic Structure of the {113} Planar Interstitial Defects in Silicon   [ 421 K ]
  Authors: Masanori Kohyama, S. Takeda
• p171 Local Grain Boundary Property Measurements   [ 1020 K ]
  Authors: D.B. Holt
• p183 Local Investigation of the Electrical Properties of Grain Boundaries in Silicon   [ 450 K ]
  Authors: J. Palm, D. Steinbach, H. Alexander
• p189 Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping   [ 574 K ]
  Authors: A. Barhdadi, S. Sivoththaman, M. Barbe, M. Rodot, J.L. Maurice
• p195 Minority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky Contact   [ 304 K ]
  Authors: C. Häßler, P. Bittner, Gerhard Pensl, M. Schulz
• p201 Electrical Transport in Polycrystalline Semiconductors   [ 525 K ]
  Authors: O. Ka
• p213 Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors   [ 289 K ]
  Authors: Jens Werner
• p219 Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon   [ 313 K ]
  Authors: Maurizio Acciarri, C. Savigni, Simona Binetti, Sergio Pizzini