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Polycrystalline Semiconductors III

Solid State Phenomena Volumes 37 - 38

• Papers
• Abstracts

• p503 Characterization of CuInSe₂ Absorber Thin Films Grown by Metal Organic Chemical Vapor Deposition   [ 393 K ]
  Authors: M.C. Artaud, F. Ouchen, S. Duchemin, J. Bougnot
• p509 Physical Vapor Deposition of CuInX₂ (X = S, Se) Thin Films: A Model for the Growth Mechanism   [ 352 K ]
  Authors: R. Klenk, T. Walter, H.-W. Schock, David Cahen
• p515 Effect of Annealing in a Selenium Atmosphere on the Properties of Flash Evaporated CuInSe₂ Polycrystalline Thin Films   [ 291 K ]
  Authors: S. Harsono, M. Lachab, A. Attia, F. Guastavino, D. Llinares
• p521 Effect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe₂ Thin Films Prepared by Two Methods   [ 309 K ]
  Authors: N. Agli, M. Abbaci, A. Maasmi, N. Benslim, L. Mahdjoubi, Marcel Pasquinelli, Santo Martinuzzi
• p527 Physical Properties of Electrodeposited Copper Indium Diselenide Thin Films and Junction Realization   [ 291 K ]
  Authors: L. Thouin, J.F. Guillemoles, S. Massaccesi, R. Ortega Borges, S. Sanchez, P. Cowache, D. Lincot, J. Vedel
• p535 Polysilicon Technologies for Large Area Displays   [ 605 K ]
  Authors: N. Duhamel, B. Loisel
• p547 Thermal Stability of Glass Substrates During Solid Phase Crystallisation of a-Si on Glass by Rapid Thermal Annealing   [ 254 K ]
  Authors: L. Plévert, L. Haji, M. Bonnel, N. Duhamel, B. Loisel
• p553 Polycrystalline Silicon Thin Film Transistors for Liquid Crystal Displays   [ 657 K ]
  Authors: I Wei Wu
• p565 Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH₄- and Si₂H₆- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization   [ 299 K ]
  Authors: M. Fuse, I. Asai, M. Hirota, Yoshinari Miyamoto
• p571 Modelling and Optimisation of Poly-Si Thin Film Transistors for Flat Panel Displays   [ 286 K ]
  Authors: M. Kandouci, S. Mottet