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Hydrogenated Amorphous Silicon

Solid State Phenomena Volumes 44 - 46

• Papers
• Abstracts

• p475 Persistent Photoconductivity in Hydrogenated Amorphous Silicon   [ 1 M ]
  Authors: C. Lee
• p495 Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?   [ 448 K ]
  Authors: G. Weigelt, Martin Hundhausen, Lothar Ley
• p505 Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors   [ 1 M ]
  Authors: R. Brüggemann
• p525 Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products   [ 568 K ]
  Authors: N. Wyrsch, N. Beck, P. Pipoz, M. Goerlitzer, Haine Beck, A. Shah
• p535 Electronic DC Transport in a-Si:H   [ 887 K ]
  Authors: Harald Overhof
• p551 Properties of Hot Carriers in a-Si:H in Comparison to a-Se   [ 333 K ]
  Authors: G. Juska, K. Arlauskas
• p559 Short Range Order and Atomic Charge Distribution in Amorphous Silicon   [ 440 K ]
  Authors: S. Kugler
• p573 Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H   [ 1 M ]
  Authors: H. Herremans
• p597 Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon   [ 2 M ]
  Authors: J.P. Kleider, C. Longeaud
• p647 Determinaton of Localized-State Distributions from Transient Photoconductivity Data   [ 343 K ]
  Authors: H. Naito