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Hydrogenated Amorphous Silicon

Solid State Phenomena Volumes 44 - 46

• Papers
• Abstracts

• p657 One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon   [ 544 K ]
  Authors: C.Y. Fong, L.H. Yang
• p669 The Nature of the Band Gap in Amorphous Si:H   [ 233 K ]
  Authors: G.J. Morgan, J. Okumu
• p677 The Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:H   [ 446 K ]
  Authors: G.L. Kong, De Liang Zhang, Y.P. Zhao, X.B. Liao
• p685 Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H   [ 308 K ]
  Authors: A. Kondo, K. Shimakawa, K. Hayashi, S. Akahori, D. Kato, M. Moriguchi, S.R. Elliott
• p695 Hydrogen Influence of Thermally Induced Metastability in Amorphous Silicon   [ 390 K ]
  Authors: S.M. Pietruszko, J. Olszewski, A.V. Zherzdev
• p705 Light-Induced Effects in a-Si:H and a-Si_1-xN_x:H   [ 388 K ]
  Authors: T. Shimizu, M. Kumeda
• p715 The Role of the Light Exposure on the Defect Formation of a-Si:H   [ 457 K ]
  Authors: P. Kounavis, E. Mytilineou
• p723 Simulations of Defect Formation Processes in Hydrogenated Amorphous Silicon   [ 247 K ]
  Authors: R. Biswas, I. Kwon, C.M. Soukoulis, Q.M. Li
• p731 Optically Detected Magnetic Resonance in a-Si:H   [ 1 M ]
  Authors: K. Morigaki, Masao Kondo
• p765 Recombination via Defect Complexes in Hydrogenated Amorphous Silicon   [ 368 K ]
  Authors: I.P. Zvyagin