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Gettering and Defect Engineering in Semiconductor Technology VII

Solid State Phenomena Volumes 57 - 58

• Papers
• Abstracts

• p1 Design: New Material Challenge for Silicon ULSI   [ 276 K ]
  Authors: Lionel C. Kimerling
• p9 Silicon Wafer Technology: The Challenges towards the Gigabit Era   [ 603 K ]
  Authors: A.P. Mozer
• p19 Hydrogen Annealed Silicon Wafer   [ 318 K ]
  Authors: S. Nadahara, H. Kubota, S. Samata
• p27 Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal   [ 355 K ]
  Authors: R. Habu, Kazuto Kawakami, Mitsuhiro Hasebe
• p37 CZ Crystal Growth Development in Super Silicon Crystal Project   [ 142 K ]
  Authors: H. Yamagishi, M. Kuramoto, Y. Shiraishi, M. Machida, K. Takano, N. Takase, T. Iida, J. Matsubara, Kazuya Takada
• p43 Gettering by Voids in Silicon: A Comparison with other Techniques   [ 546 K ]
  Authors: Vito Raineri
• p53 Gettering in Advanced Low Temperature Processes   [ 570 K ]
  Authors: S. Sadamitsu, S. Ogushi, Y. Koike, N. Reilly, T. Nagashima, Mizuka Sano, H. Tsuya
• p63 Metal Gettering by Defective Regions in Carbon-Implanted Silicon   [ 310 K ]
  Authors: R. Kögler, J.R. Kaschny, R.A. Yankov, P. Werner, A.B. Danilin, Wolfgang Skorupa
• p69 Metallic Impurity Gettering in MeV Implanted Si   [ 385 K ]
  Authors: O.V. Kononchuk, R.A. Brown, Sergei V. Koveshnikov, K.L. Beaman, F. Gonzalez, George A. Rozgonyi
• p75 Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon   [ 243 K ]
  Authors: H. Takahashi, Hiroshi Yamada-Kaneta, Masashi Suezawa