HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology VII

Solid State Phenomena Volumes 57 - 58

• Papers
• Abstracts

• p81 A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers   [ 535 K ]
  Authors: Mohammad B. Shabani, T. Yoshimi, S. Okuuchi, A. Kaniava
• p91 Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon   [ 271 K ]
  Authors: Reinhart Job, Wolfgang R. Fahrner, Alexander G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer
• p97 Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis   [ 294 K ]
  Authors: V.G. Litovchenko, A.A. Efremov, B.N. Romanyuk, V.P. Melnik, C. Claeys
• p103 Interaction of Impurities and Dislocations in Silicon before and after External Gettering   [ 587 K ]
  Authors: Isabelle Périchaud, Santo Martinuzzi
• p109 The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers   [ 381 K ]
  Authors: M.G. Mil'vidskii, Vladimir Voronkov, K.L. Enisherlova, V.Ja. Reznick
• p115 Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers   [ 502 K ]
  Authors: N. Gay, Santo Martinuzzi
• p123 Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si   [ 408 K ]
  Authors: Robert Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani
• p129 Vacancy-Assisted Oxygen Precipitation Phenomena in Si   [ 380 K ]
  Authors: Robert Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob
• p137 Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers   [ 473 K ]
  Authors: K. Sueoka, M. Akatsuka, H. Katahama, N. Adachi
• p143 State of Oxygen and Growth Conditions   [ 342 K ]
  Authors: T.M. Tkacheva, G.N. Petrov