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Gettering and Defect Engineering in Semiconductor Technology VII

Solid State Phenomena Volumes 57 - 58

• Papers
• Abstracts

• p213 Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons   [ 288 K ]
  Authors: H. Ohyama, Eddy Simoen, C. Claeys, Jan Vanhellemont, T. Kudou, Y. Takami, H. Sunaga
• p221 Defect Engineering Radiation Tolerant Silicon Detectors   [ 564 K ]
  Authors: B.C. MacEvoy, S.J. Watts
• p233 Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors   [ 311 K ]
  Authors: H. Feick, Michael Moll
• p239 Lattice Defects in Si_1-xGe_x Devices by Proton Irradiation and their Effect on Device Performance   [ 286 K ]
  Authors: H. Ohyama, Eddy Simoen, C. Claeys, Jan Vanhellemont, Y. Takami, H. Sunaga, J. Poortmans, M. Caymax
• p245 An IR Study of the Annealing Behaviour of A-Center in Silicon   [ 304 K ]
  Authors: Charalamos A. Londos, N.V. Sarlis, L.G. Fytros
• p251 Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes   [ 323 K ]
  Authors: Eddy Simoen, Jan Vanhellemont, C. Claeys
• p257 Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er   [ 301 K ]
  Authors: N.A. Sobolev, A.M. Emel'yanov, Yu.A. Kudryavtsev, R.N. Kyutt, M.I. Makovijchuk, Yu.A. Nikolaev, E.O. Parshin, V.I. Sakharov, I.T. Serenkov, E.I. Shek, K.F. Shtel'makh
• p263 Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor   [ 252 K ]
  Authors: B.P. Koman, R.R. Ivanochko, A.K. Shkolnyy
• p269 The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation   [ 230 K ]
  Authors: B. Pavlyk, Ya. Horyn', B. Tsybulyak
• p275 Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM   [ 747 K ]
  Authors: B. Leroy