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Gettering and Defect Engineering in Semiconductor Technology VII

Solid State Phenomena Volumes 57 - 58

• Papers
• Abstracts

• p355 Strain and Gettering in Epitaxial Silicon Wafers   [ 463 K ]
  Authors: F.G. Kirscht, Mohammad B. Shabani, T. Yoshimi, Sang Bae Kim, B. Snegirev, Cheng Ming Wang, L. Williamson, K. Takashima, P. Taylor, D. Lange
• p365 Strain in Silicon below Si₃N₄ Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements   [ 253 K ]
  Authors: A. Armigliato, R. Balboni, S. Frabboni, A. Tixier, G.P. Carnevale, P. Colpani, A. Marmiroli
• p371 Defects Produced in Silicon by Reactive Ion Etching   [ 315 K ]
  Authors: H.B. Erzgräber, H.H. Richter, M.-A. Aminpur, A. Wolff, K. Blum
• p377 Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon   [ 277 K ]
  Authors: Michael Seibt, Yue Long Huang, B. Plikat
• p383 Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si   [ 223 K ]
  Authors: E.B. Yakimov, A.L. Parakhonsky
• p387 Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers   [ 301 K ]
  Authors: M.-A. Trauwaert, Jan Vanhellemont, U. Lambert, D. Gräf, Karine Kenis, Paul W. Mertens, Marc M. Heyns
• p393 Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon   [ 315 K ]
  Authors: Andrzej Misiuk, W. Jung, Barbara Surma, J. Jun, M. Rozental
• p401 Planar Solidification of Multicrystalline Silicon for Phtovoltaic Applications   [ 1 M ]
  Authors: Wolfgang Koch, C. Häßler, H.-U. Höfs, A. Müller, I.A. Schwirtlich
• p413 Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing   [ 361 K ]
  Authors: M. Glück, J. Hersener, H.G. Umbach, J. Rappich, J. Stein
• p419 Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals   [ 243 K ]
  Authors: Yu.L. Iunin, Valeri I. Orlov, D.V. Dyachenko-Dekov, N.V. Abrosimov, S.N. Rossolenko, W. Schröder