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Gettering and Defect Engineering in Semiconductor Technology VII

Solid State Phenomena Volumes 57 - 58

• Papers
• Abstracts

• p495 Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures   [ 275 K ]
  Authors: V.V. Chaldyshev, P.N. Brounkov, A.A. Suvorova, S.G. Konnikov, V.V. Preobrazhenski, M.A. Putyato, B.R. Semyagin
• p501 Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films   [ 326 K ]
  Authors: V.A. Volodin, M.D. Efremov, V.A. Gritsenko
• p507 Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates   [ 442 K ]
  Authors: M.D. Efremov, V.V. Bolotov, V.A. Volodin, Liudmila I. Fedina, A.A. Gutakovskij, S.A. Kochubei
• p513 A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries   [ 256 K ]
  Authors: O.I. Velichko, A.K. Fedotov
• p519 New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA)   [ 348 K ]
  Authors: T.M. Tkacheva, G.N. Petrov, D.V. Vlasov
• p525 Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions   [ 199 K ]
  Authors: F. Gaiseanu, M. Sachelarie, D. Sachelarie, Jaume Esteve