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Beam Injection Assessment of Defects in Semiconductors

Solid State Phenomena Volumes 63 - 64

• Papers
• Abstracts

• p257 Near-Field Cathodoluminescence (NF-CL) Investigations on Semiconducting Materials   [ 252 K ]
  Authors: V. Ebinghaus, R.M. Cramer, R. Heiderhoff, L.J. Balk
• p261 Local Stress, Surface Reconstruction, and Bulk Defect Nucleation: An STM Study on Silicon   [ 813 K ]
  Authors: H.J. Müssig, Jaroslaw Dąbrowski
• p273 Correlative SEM/STM Study of Local Electronic Properties in Compound Semiconductors   [ 797 K ]
  Authors: J. Piqueras, G.N. Panin, C. Díaz-Guerra, P. Hidalgo, B. Méndez
• p283 Observation and Modelization of the Electrostatic Force due to the Local Variations of the Surface Potential by Electrostatic Force Microscopy (EFM)   [ 222 K ]
  Authors: J.F. Bresse
• p291 The Sloc Positron Beam Technique – A Unique Tool for the Study of Vacancy-Type Defects in Semiconductors   [ 581 K ]
  Authors: R. Krause-Rehberg, S. Eichler, J. Gebauer, F. Börner
• p301 Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon   [ 493 K ]
  Authors: O.F. Vyvenko
• p311 Grain Growth of ZnSe Recrystallized in the Solid Phase   [ 347 K ]
  Authors: S. Fusil, A. Zozime, R. Pénelle, F. Grillon, C. Le Paven, Andre Rivière, R. Triboulet
• p317 Lateral Doping Inhomogeneities as Revealed by μ-NEXAFS and μ-PES   [ 507 K ]
  Authors: R.P. Mikalo, P. Hoffmann, Th. Heller, D. Schmeißer
• p327 Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures   [ 387 K ]
  Authors: E.I. Rau, A.N. Zhukov, E.B. Yakimov
• p333 Modification of Electronical and Optical Properties in SiO₂ Films by Electron Beam Irradiation   [ 326 K ]
  Authors: H.-J. Fitting, A. von Czarnowski, A.N. Trukhin, M. Goldberg, T. Barfels